Lead(II) bis(1-N,N-dimethylamino-2-methyl-2-propoxide) in combination with Ti(OiPr)4 as Ti source and O3 and/or H2O as oxygen source, was used for the growth
of. PbTiO3 thin films on Si and Ru substrates by ALD at 200 °C substrate temperature. When H2O was used as the oxygen source for both Pb and Ti precursors, under the conditions where a stoichiometric PTO film was achieved (Pb/Ti concentration ratio ∼ 1) the layer growth was most effective. However, when O3 was used as the oxygen source for the Ti precursor, Pb-rich PTO films were deposited and the PTO growth per cycle increased with increasing the
PbOx/TiO2 subcycle ratio. This behaviour was explained by the difference in reactions depending on the oxygen source used, in particular, by a reaction mechanism involving the direct condensation between surface formate species and alkoxy species in the case
of O3.[[i]]
[i] H. J. Lee, M. H. Park, Y.-S. Min, G. Clave, N. Pinna, Ch.S. Hwang, J. Phys. Chem. C, 2010, 114 (29), pp 12736–12741, DOI: 10.1021/jp101423f , “Unusual Growth Behavior of Atomic Layer Deposited PbTiO3 Thin Films Using Water and Ozone As Oxygen Sources and Their Combination”
Lead bis(dimethylaminomethylpropanolate) Pb(DMAMP)2 mixed in a cocktail source with Zr(MMP)4 and Ti(MMP)4 in the ECH solvent, was successfully applied for the deposition of ferroelectric PZT thin films by liquid delivery MOCVD. This cocktail solution was perfectly vaporizable >290°C and was stable at least 3 months. Perovskite PZT phase flayers with preferred 111-orientation were obtained at 400°C substrate temperature. [[i]]
[i] Y. OTANI, K. UCHIYAMA, S. OKAMURA, T. SHIOSAKI, Integrated Ferroelectrics: An International Journal, Vol. 81, Issue 1, 2006, DOI: 10.1080/10584580600663326 , pages 261-270, “LOW TEMPERATURE DEPOSITION OF Pb(Zr,Ti)O3 THIN FILMS BY LIQUID DELIVERY MOCVD USING A COCKTAIL SOURCE WITH Pb(DMAMP)2, Zr(MMP)4 AND Ti(MMP)4”