Methylzinc alkoxides ZnMe(OR) (R = iPr, tBu) were reported to be used as zinc CVD precursors.[4]
As an example, methylzinc alkoxides have been successfully used to prepare ZnO films at 250°C []
Methylzinc isopropoxide ZnMe(OiPr) as Zn precursor, in combination with water (H2O) as oxygen source and dimethylaluminum isopropoxide (DMAI) as Al-dopant precursor, has been applied for the growth of undoped and Al-doped ZnO thin films by ALD, with optimal reaction conditions being substrate temperature range of 160∼200 °C, resulting in the ZnO growth rate of 1.9∼2.0 Å/cycle ; the maximum growth rate (2.58 Å/cycle) was reached at 240 °C. Thickness measurements of the ZnO films with varying ZnMe(OiPr) supply time and numbers of ZnMe(OiPr)-H2O ALD cycles confirmed the self-limiting ALD process (alternate surface reactions of ZnMe(OiPr) and H2O). Undoped ZnO film resistivities were 5×10−3 ∼ 3.2×10−3 Ωcm, depending on the substrate temperature ; the resistivity minimized to ∼1.35 × 10−4 Ωcm by Al-doping. Strong free excitonic peak at 3.27 eV with almost negligible deep level emission was detected by room temperature PL measurements, witnessing the high purity of ZnO material obtained using ZnMe(OiPr) as Zn precursor [[i] ]
[i] An, Ki-Seok; Cho, Wontae; Lee, Byung Kook; Lee, Sun Sook; Kim, Chang Gyoun
Journal of Nanoscience and Nanotechnology, Vol 8, Number 9, Sep2008 , pp. 4856-4859(4),
« Atomic Layer Deposition of Undoped and Al-Doped ZnO Thin Films Using the Zn Alkoxide Precursor Methylzinc Isopropoxide »
Methylzinc tert-butoxide, MeZn(OtBu) (and in comparison methylzinc isopropoxide MeZn(OiPr)) have been applied as single-source precursors (i.e. in the absence of an added oxygen source) for the growth of ZnO thin films by low-pressure MOCVD. The growth of ZnO layers was performed using glass substrates at the temperatures 250–400 °C , with growth rates 0.2- 4.4 µm/h obtained [[i]]
[i] J.Auld, D.J. Houlton, A.C.Jones, S.A.Rushworth, M.Azad Malik, P.O'Brien, G.W. Critchlow, J. Mater. Chem., 1994, 4, 1249-1253, DOI: 10.1039/JM9940401249
« Growth of ZnO by MOCVD using alkylzinc alkoxides as single-source precursors »
Fluorinated alkylzinc alkoxide complexes ([EtZn(OCH(CF3)2]n (=ZnEt(hfip)), [EtZn(OCMe2CF3]n, [EtZn(OCMe(CF3)2)]n were synthesized for possible use as potential precursors to fluorine-doped ZnO films, by reaction of diethyl zinc with fluorinated alcohols. The [EtZn(ORf)]n compounds reacted with excess pyridine to yield the pyridine adducts [EtZn(py)(μ-ORf)]2 ; fhe determined X-ray structure of [EtZn(py){μ-OCH(CF3)2}]2 has virtual Ci symmetry. [[i] ]
[i] Seigi Suh, Liliana A. Mîinea, Saba Javed, David M. Hoffman, Polyhedron, Vol.27, Issue 2, 2008, Pages 513–516, « Synthesis of ethyl zinc fluoroalkoxide complexes and the crystal structure of [EtZn(py){μ-OCH(CF3)2}]2 »