Titanium (N,N‘-diisopropylacetamidinate) tris(isopropoxide) Ti(NiPr-Me-amd)(OiPr)3) is liquid at room temperature and have high volatility, thermal stability
and reactivity. Due to these advantageous properties, it was proposed asnovel heteroleptic titanium precursor for the ALD growth of TiO2 thin films.[i]
[i] T. Blanquart, J. Niinistö, M. Ritala, M. Leskelä, Chem. Vapor Dep., 2014, Vol.20, Iss.7-8-9, p.189-208, Special Issue: Atomic‐Scale‐Engineered Materials (ASEM), Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors, https://doi.org/10.1002/cvde.201400055
Titanium (N,N‘-diisopropylacetamidinate) tris(isopropoxide) Ti(OiPr)3(NiPr-Me-amd), combined with water (H2O) as oxygen source, was applied as novel ALD precursor for the growth of TiO2 layers. This precursor demonstrated an ALD window at 300–350°C, and reasonable growth rate (0.3-0.45 Å/cycle) in this temperature range. The as-deposited TiO2 layers obtained using Ti(OiPr)3(NiPr-Me-amd) were crystallized in the anatase phase: the films were very pure and stoichiometric (by XPS). The refractive indices and absorption coefficient of the layers were determined by spectroscopic ellipsometry. Reaction mechanisms of the Ti(OiPr)3(NiPr-Me-amd)/ H2O ALD process were studied in situ using quadrupole mass spectrometry (QMS) and quartz crystal microbalance (QCM).[i],
[i] T. Blanquart, J. Niinistö, M. Gavagnin, V. Longo, V. R. Pallem, C. Dussarrat, M. Ritala and M. Leskelä, Chem. Mater., 24, 3420 (2012), DOI: 10.1021/cm301594p, « Novel Heteroleptic Precursors for Atomic Layer Deposition of TiO2 », https://pubs.acs.org/doi/abs/10.1021/cm301594p?journalCode=cmatex
[ii] M. Kaipio, T. Blanquart, Y. Tomczak, J. Niinistö, M. Gavagnin, V. Longo, H.D. Wanzenböck, V.R. Pallem, Ch. Dussarrat, E. Puukilainen, M. Ritala, M. Leskelä, Langmuir, 2014, 30 (25), pp 7395–7404, « Atomic Layer Deposition, Characterization, and Growth Mechanistic Studies of TiO2 Thin Films », DOI: 10.1021/la500893u,