Nickel (II) dialkyldithiocarbamates Ni(RR’2N-CS2)2 (RR’= MeEt, Et2, MenBu, MenHex) were synthesized and characterized.
Ni(RR’2N-CS2)2 were applied as singe source precursors for the growth of nicke l sulfide NiSx films on glass substrates by low-pressure MOCVD. The deposited layers consisted of NiS1.03 phase, or of a mixture of NiS1.03 and NiS. The
films were characterised by powder XRD, SEM, TEM and EDX.[[i]]
[i] P. O'Brien, J.H. Park, J. Waters, Thin Solid Films, 2003, Vol.431–432, p.502–505, Proc. Symp. B, Thin Film Chalcogenide Photovoltaic Materials, E-MRS Spring Meeting, « A single source approach to deposition of nickel sulfide thin films by LP-MOCVD », www.sciencedirect.com/science/article/pii/S004060900300244X