ALKYLSILANES

Methylsilane SiH3Me

    Methylsilane SiH3Me is used in the plasma-assisted CVD of silicon carbide (SiC) and as a precursor to the epitaxial growth of SiGeC alloy layers via rapid thermal CVD.[[i]]

[i] Mi, J. et. al. J. Vac. Sci. Technol. B 14, 1660, (1996)

Trimethylsilane SiHMe3

    Trimethylsilane SiHMe3 (gas) is multifunctional nonpyrophoric, environmentally friendly CVD precursor engineered for PECVD processes used to deposit thin-film dielectrics such as silicon carbide (SiC) and silicon oxycarbide (a-SiOC:H) for application as copper diffusion barriers, etch stop, hard mask, gap fill, low-k interlevel dielectric and for passivation. Me3SiH and Me4Si can also be used for the deposition of silicon carbonitride (a-SiCN:H) and silicon nitride (SiN), respectively.[i]

[i] www.dowcorning.com

Tetramethylsilane SiMe4

Tetramethylsilane Si(CH3)4 (volatile liquid) is multifunctional nonpyrophoric, environmentally friendly CVD precursors ( see Trimethylsilane) engineered for PECVD processes used to deposit thin-film dielectrics such as silicon carbide (SiC) and silicon oxycarbide (a-SiOC:H) for application as copper diffusion barriers, etch stop, hard mask, gap fill, low-k interlevel dielectric and for passivation. Me4Si can also be used for the deposition of silicon carbonitride (a-SiCN:H) and silicon nitride (SiN), respectively.[dowcorning]

Tetramethylsilane (4MS) is used in the semiconductor industry for PECVD of low k dielectric and SiC:H etch stop films on several OEM platforms. It is a colorless highly volatile liquid in normal conditions. 4MS is also used as a SiC precursor for optoelectronics, power semiconductors and photosensitive films applications. 4MS is widely used in analytical laboratories as NMR standard. ultrahigh purity 4MS (f.e. from Air Liquide) is qualified at several semiconductor customers and OEM worldwide.[ 568]

Dimethylisopropylsilane

Dimethylisopropylsilane SiHMe2(iPr) (DMIPS,   C5H14Si, boiling point 66°C) has been used for SiC deposition on GaAs Substrate at 850°C for 25 min. at 1 atm process pressure with growth rate approx. 25 micron/hr. XRD Spectrum of SiC on GaAs is presented on Fig.

Di-tertiarybutylsilane (tBu)2SiH2 (DTBSi)

Di-tertiarybutylsilane (tBu)2SiH2 (DTBSi) has been used as a precursor for n-doping during MOVPE growth of GaAs-based material systems, f.e. high-Al content (AlGa)As layerstacks (xAl > 0.8). Si-doping profile 2x10E18 has been achieved. [Dockweiler Chemicals]

1,3-Disilabutane SiH3- CH2-SiH2-CH3

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