Detecting free radicals during the hot wire chemical vapor deposition of amorphous silicon carbide films using single-source precursors
Zaharias, Gillian A., Duan, H. L. ; Bent, Stacey F.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
May 2006, Volume: 24 , Issue: 3, Page(s): 542 - 549
CVD Precursors for SiC or SiOC deposition for electronic applications
(1,1,3,3-tetramethyl-1,3-disilacyclobutane) (and for comparison dimethylisopropylsilane) was applied as CVD precursors for chemical vapor deposition of SiC and related materials. These are single-source, volatile liquid SiC precursors with near-zero evaporation residue not requiring solvents in deposition chamber, suitable for APCVD or low pressure CVD. Their advantages are absence of halides or acid effluent and convenient deposition temperature range (825-950°C). These precursors can be used for preparation of coatings of SiC or SiOC for electronic applications as well as infiltration of fiber performs, sealing of surface pores and cracks for aerospace, industrial, nuclear applications.
1,1,3,3-tetramethyl-1,3-disilacyclobutane Me2Si(CH2)2SiMe2 (TM-DSCB, C6H16Si2), boiling point: 124°C) has been used for the growth of SiC on quartz substrate at 920°C for 25 min. at 1 Atm process prtessure with growth rate approx. 6 µm/h.SEM Image
of SiC deposited on Quartz is shown on Fig. [i]
[i] http://www.starfiresystems.com/products_specialty_silanes_cvd.php