Tungsten bis(tertbutylimide) bis(diisopropylacetamidinate) [W(NtBu)2{(iPrN)2CMe}2] has been tested for the MOCVD deposition of tungsten nitride WN thin films at 500-800°C growth temperatures - either as single source precursor (SSP), or with NH3 added as an extra nitrogen source. Films grown under SSP conditions (without addition of NH3) consisted of carbide and nitride phases, whereas the layers grown under NH3 were polycrystalline metal nitrides. The layers deposited at 500 °C were smooth and amorphous, while those grown at higher temperatures consisted of very fine grains. RBS, NRA and XPS were applied for the study of film elemental composition; it was determined that NH3-grown layers had increased levels of N and decreased C contamination (compared to the films grown under SSP conditions).[i]
[i] N.B.Srinivasan, T.B.Thiede, T. de los Arcos, V.Gwildies, M. Krasnopolski, H.-W.Becker, D.Rogalla, A.Devi, R.A.Fischer, Surf. Coat. Techn., 2013, Vol. 230, p.130-136, « Transition metal nitride thin films grown by MOCVD using amidinato based complexes [M(NtBu)2{(iPrN)2CMe}2] (M = Mo, W) as precursors », https://www.sciencedirect.com/science/article/abs/pii/S0257897213005161