Antimony tris(tert-butylthiolate) Sb(StBu)3 and antimony tris(1,1,1-trifluoroethylthiolate) Sb(SCH2CF3)3, were synthesized and characterized , the structure of Sb(SBu)3 was determined by single crystal XRD.
Sb(StBu)3 and Sb(SCH2CF3)3 was applied as single source precursors for the growth of antimony sulfide Sb2S3
thin films by low pressure MOCVD on glass slides (at substrate temperature of 300°C) and silicon wafers (at temperature 450 °C). Orthorhombic stibnite layers were
obtained with both precursors, according to XRD; film stoichiometries were Sb2S2.78-3.10 by EDXS. In addition,Sb(SCH2CF3)3
produced Sb2S3 layers with small amounts of antimony metal. Layer morphologies were strongly substrate dependent: Sb(SBu)3 produced
random platelets regardless of substrate, whereas Sb(SCH2CF3)3 deposited uniform film with islands of needle morphology on glass or long rods of stacked platelets on Si.
The layer grown on Sb2S3 deposited on glass was photoactive and had a band gap of 1.6 eV. [i]
[i] J. Rodriguez- Castro, Ph. Dale, M.F. Mahon, K.C. Molloy, L. M. Peter, Chem.Mater., 2007, 19 (13), pp 3219–3226, DOI: 10.1021/cm070405j, https://pubs.acs.org/doi/abs/10.1021/cm070405j « Deposition of Antimony Sulfide Thin Films from Single-Source Antimony Thiolate Precursors »