Methylamine MeNH2
Aliphatic nitrogen-containing precursors consisting of C1- and C2-units (f.e methylamine MeNH2) , were used as precursors for the growth of nitrogen-doped graphene and carbon films on copper by thermally induced CVD. The presence of (N-doped) graphene was confirmed by the 2D mode of the Raman spectra. The grown layers were anylyzed by SEM, TEM, EDX, XPS, and Raman spectroscopy. The isolated graphene films obtained from nitrogen-containing precursors revealed a high conductivity and transparency compared to standard graphene CVD samples. Precursors with amine functional groups (e.g., methylamine) lead to direct formation of graphene even without additional hydrogen present in the gas phase, unlike e.g., methane under comparable CVD conditions. Thus, the intermediate gas phase species (e.g., amine radicals) can significantly enhance the growth kinetics of the graphene film. [[i]]