Hafnium bis(diethylamide) bis (N,N’-diisopropyl-N”-diethylguanidinate) Hf[(NEt2)2{(iPrN)2CNEt2}2]
Hafnium bis(ethylmehylamide) bis (N,N’-diisopropyl-N”-ethylmethylguanidinate) Hf[(NEtMe)2{(iPrN)2CNEtMe}2].
Volatile guanidinato-based hafnium complexes [Hf (NR2)2{(iPrN)2CNR2}2] (R = Et2, EtMe and Me2) have been synthesized and characterized; their beneficial thermal characteristics make them suitable precursors for ALD applications.
[(Et2N)2Hf{(iPrN)2CNEt2}2] and [(EtMeN)2Hf{(iPrN)2CNEtMe}2] have been applied as precursors for the growth of thin films of HfO2 by ALD in the temperature range of 250-425 °C. Influence of deposition temperature on the growth rate, surface morphology, crystal structure and crystal density of the as-deposited films was studied. As deposited HfO2 films had low C contamination (1.8-2.9 at.%) by XPS and SNMS; the Hf:O ratio was ca. 1:2.07- 2.1, as determined by RBS and SNMS. [[i]]
[i] A.Milanov, K. Xu, H. Parala, A. Devi, VOLATILE GUANIDINATO-BASED METALORGANIC PRECURSORS FOR ALD PROCESS