Tetraphenyl lead Pb(C6H5)4 (PbPh4) was reported to be tested as Pb precursors for the growth of c-axis oriented lead titanate
PbTiO3 film of MgO(100) at a substrate temperature of ~300° C. The formed lead titanate film was reported to possess satisfactory dielectric and pyroelectric characteristics comparable to or surpassing those of bulk material. [[i]]
[i] Eiji Fujii, Hideo Torii, Masaki Aoki , US5006363A,1988-12-08, Plasma assisted MO-CVD of perooskite dalectric films, https://patents.google.com/patent/US5006363A/en
Tetraphenyllead PbPh4 (combined with Ti(OiPr)4 as Ti source, and O3 and H2O as oxidant) was applied for the ALD growth of lead
titanate PbTiO3 thin films on Si(100) substrates. The dependence of the layer growth, stoichiometry and quality on the Pb:Ti precursor pulsing ratio was studied at two different temperatures (250 and 300 °C). Pb:Ti precursor pulsing ratio of 10:1 at 250 °C or 28 : 1 at 300 °C was applied, resulting in uniform and stoichiometric films. As-deposited films were amorphous but rapid thermal annealing at 600–900 °C
(in N2 and O2) resulted in the crystalline PbTiO3 phase. The film roughness for as-deposited and annealed films was studied by AFM.[[i]]
[i] J. Harjuoja, A. Kosola, M. Putkonen, L. Niinistö, Thin Solid Films, 2006, Vol. 496, Iss. 2, p.346-352, « Atomic layer deposition and post-deposition annealing of PbTiO3 thin films »
Tetraphenyl lead (Ph4Pb), in combination with Zr(thd)4 as Zr source and ozone O3 as an oxidant, was applied the preparation of lead zirconate PbZrO3 films by ALD (the first-time report),
and as well evaluated for the possible use of lead titanate zirconate PbZr1-xTi1-xO3 (PZT) preparation. The influence of variation of pulsing ratios at deposition temperatures 275-300 °C on the film growth, stoichiometry and quality was studied. Crystalline
perovskite PbZrO3 phase was obtained on SrTiO3 (1 0 0) substrates annealed at 600 °C, as determined by XRD. Pb-deficient films as well as annealed samples had reduced surface roughness [[i]]
[i] J. Harjuoja, S. Väyrynen, M. Putkonen, L. Niinistö, E. Rauhala, Appl. Surf. Sci., 2007, vol. 253, iss. 12, p.5228-5232, https://doi.org/10.1016/j.apsusc.2006.11.041 , « Atomic layer deposition of PbZrO3 thin films »
Tetraphenyllead PbPh4 (and for comparison lead diethyldithiocarbamate Pb(dedtc)2, and Pb(thd)2) was applied as precursor for the growth of PbO2 thin films by ALD on Si(100)
substrates, using ozone O3 as oxidant. The depositions were carried out at 185–400 °C for Ph4Pb (and at 300–350 °C, 150–300 °C for Pb(dedtc)2 and Pb(thd)2, respectively).
Films deposited from Ph4Pb/O3 (and as well from Pb(thd)2/O3) were crystalline PbO2 (either orthorhombic or tetragonal, as was found by XRD). Surface morphology of the grown layers was characterized by AFM, while stoichiometry and possible impurities were anaylised
by time-of-flight elastic recoil detection analysis.[[i]]
[i]J. Harjuoja, M. Putkonen, L. Niinistö, Thin Solid Films, 2006, Vol.497, Iss. 1–2, p. 77-82, « Exploiting volatile lead compounds as precursors for the atomic layer deposition of lead dioxide thin films », https://doi.org/10.1016/j.tsf.2005.09.188, https://www.sciencedirect.com/science/article/pii/S0040609005018407