Iron bis(trichlorsilyl)tetrakis(carbonyl) Fe(SiCl3)2(CO)4

 Iron bis(trishlorsilyl) tetrakis(carbonyl) Fe(SiCl3)2(CO)4 was applied as single source Fe-Si precursor for the CVD growth of nanowires: FeSix NWs on SiOx/Si, CoSi2/Si, and CoSi/Si (100) substrates, Fe5Si2Ge NWs on Ge(100), and  Fe1−xCoxSi alloy NWs using Fe(SiCl3)2(CO)4 combined with CoCl2 as co-precursor  on CoSi/Si substrates.  It was determined that the group IV elements (Si, Ge) in the NW products originate from both the precursor and the substrate, whereas the metal elements (Fe, Co) incorporated into the NWs originate from vapor phase precursors.[i]

 [i] J. M. Higgins, P. Carmichael, A.L. Schmitt, S. Lee, J.P. Degrave, S.Jin, ACS Nano, 2011, 5 (4), pp 3268–3277, DOI: 10.1021/nn200387y, “Mechanistic Investigation of the Growth of Fe1−xCoxSi (0 ≤ x ≤ 1) and Fe5(Si1−yGey)3 (0 ≤ y ≤ 0.33) Ternary Alloy Nanowires” 

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