Dysprosium tris(isopropoxide) Dy(OiPr)3 has been synthesized and characterized. [[i]]. Dy(OiPr)3 was suggested to be a potentially applicable as Dy MOCVD precursor
[i] K. S. Mazdiyasni, C. T. Lynch, J. S. Smith, Inorg. Chem., 1966, 5 (3), pp 342–346, DOI: 10.1021/ic50037a003, « The Preparation and Some Properties of Yttrium, Dysprosium, and Ytterbium Alkoxides »
Dysprosium tris(1-methoxy-2-methyl-2-propanolate) Dy(mmp)3 tn combination with Sc(mmp)3 precursor have been used for the AVD (Atomic Vapor Deposition -
another name for pulsed injection MOCVD) growth of (DyxSc1–x)2O3 thin films
on Si substrates at moderate temperatures (450–600°C), allowing easy integration into a standard transistor flow. Uniform (DyxSc1–x)2O3 layers with
smooth top surface and density close to bulk were obtained, having gate leakage current 1.8×10–5 A/cm2 at 4.5 V for an equivalent oxide thickness of 2.0 nm, with limited hysteresis (9 mV) and frequency dispersion (3% difference in accumulation capacitance between 10 and 250 kHz). Despite possibility to grow layers with good electrical properties
at moderate temperatures (450–600°C) the processes using these precursors showed high particle formation levels and Li contamination due to lack of precursor quality.[i]
[i] S. Van Elshocht, P. Lehnen, B. Seitzinger, A. Abrutis, C. Adelmann, B. Brijs, M. Caymax, T. Conard, S. De Gendt, A. Franquet, C. Lohe, M. Lukosius, A. Moussa, O. Richard, P. Williams, T. Witters, P. Zimmerman, M. Heyns, J. Electrochem. Soc., Vol. 153, Iss. 9, pp. F219-F224 (2006), « Metallorganic Chemical Vapor Deposition of Dysprosium Scandate High-k Layers Using mmp-Type Precursors »