Cyclopentadienyllithium LiCp was applied as the dopant precursror for the growth of lithium-doped ZnS epitaxial layers on GaAs substrates by MOVPE.
Presence of lithium acceptors in the grown layers was found by low-temperature PL spectroscopy. The increasing sublimation temperature of lithium dopant precursor resulted in decrease of the electrical resistivity
of the films. The highest p-type carrier concentration achieved was 7.5×1015 cm-3, with lowest resistivity ca. 4×102 Ω·cm. [[i]]
[i] I.Mitsuishi, J. Shibatani, M.-H. Kao, M. Yamamoto, J. Yoshino, H. Kukimoto, Jpn. J. Appl. Phys. 29 (1990) pp. L733-L735, « Metalorganic Vapor Phase Epitaxial Growth of Lithium-Doped ZnS »
Cyclopentadienyl lithium LiCp was used as a dopant for the growth of Li-doped ZnSe films by atmospheric MOCVD at 500°C, with ZnMe2 and SeMe2 used as
Zn, Se source materials. The grown Li-doped ZnSe films have been characterized by a low-temperature PL spectroscopy; it was shown that Li acts as a shallow acceptor in ZnSe with an activation energy ca. 101–118 meV. No evidence indicating the presence of interstitial Li donors has been observed in the excitonic emission region. It was found that in Li-doped ZnSe films the intensity of emission from deep centers, such as so-called self-activated
and copper-green emission, is remarkably reduced. [[i] ,[ii]]
[i] A. Yoshikawa, Sh. Muto, Sh. Yamaga, H. Kasai, Jpn. J. Appl. Phys. 27 (1988) pp. L260-L262, Photoluminescence Properties of Li-Doped ZnSe Films Grown by Metalorganic Chemical Vapor Deposition
[ii] Akihiko Yoshikawa, Shin-ichiro Muto, Shigeki Yamaga and Haruo Kasai, Journal of Crystal Growth, Vol, 93, Iss. 1-4, 1988, p.697-702, “Growth and properties of lithium-doped ZnSe films by atmospheric pressure metalorganic vapor phase epitaxy”
Lithium cyclopentadienyl LiCp has been tested as ALD precursor; lithium containing films were obtained by ALD from LiCp and water [30].