Antimony tris(dimethylamide) (or tris(dimethylaminoantimony)) Sb(NMe2)3 ( M=253.81 (or 253.98)) is a colorless light sensitive low viscosity liquid, having density d = 1.3 (20°C), 1.325 (25°C), melting point <-78°C, boiling point 32-34°C/0.45Torr, 57°C/2Torr.
Vapor pressure data are quite varying in the literature:.
(Torr) 2.04/ 20°C, 2.9/ 27ºC, 3Torr/30°C, 4.0/ 35°C, 4.6/ 40°C, 5.9/ 45°C, 9.0/ 50°C, 12.6/ 60°C, 20 Torr/80°C (logP(Torr) = 6.231 - 1734/T(K) ) [Shipley]
2) 0.45Torr/32-34°C, 2.0Torr/57°C [Rohm and Haas],
3) 0.75 Torr/20°C [SAFC Hitech]
Antimony tris(dimethylamide) Sb(NMe2)3 was proposed as potential precursor for the growth of Sb2Te3 films by MOCVD, as it has sufficient volatility for this purpose [[i]
Antimony tris(dimethylamide) Sb(NMe2)3 (combined with TeiPr2 as Te source) was applied as precursor for the
growth of Sb2Te3 on SiN by CVD at substrate temperature 350°C, press 3 Torr, run time 30min, 50 rpm. The bubbler and the lines were kept at 75°C. N2(bubbler) 300sccm
x 2 + N2 dilute 200sccm x2, SH flow 200sccm N2 . 300nm thicke Sb2Te3 layers were grown, they were characterized by AES and SEM [555]
[i] M.R. Mason, S.S. Phulpagar, M.S. Mashuta, J.F. Richardson, Inorg. Chem., 2000, 39 (17), pp 3931–3933, DOI: 10.1021/ic991462k, « Synthesis and Characterization of Chelating Triamide Complexes of Bismuth and Antimony »
Tris(dimethylamino)antimony Sb(NMe2)3 (TDMASb) , combined with trimethylindium InMe3 as In source, was applied as antimony precursor for the growth of epitaxial
layers of InSb on p−InSb substrates by MOCVD. Growth conditions were following: deposition temperatures 285-500 °C, growth pressure 76-660 Torr, V/III ratio 0.63-8.6, growth rates 0.06-0.67 μm/h.
The growth rate was proportional to the temperature for temperatures ≤425 °C, and GR was proportional to the TMIn flow at all temperatures. p‐type InSb layers were grown at temperatures ≳400 °C, whereas n‐type InSb layers were obtained at growth temperatures ≤400 °C. The pyrolysis temperature of Sb(NMe2)3
was found to be lower than that of InMe3.[[i]]
[i] K. C. Baucom, R. M. Biefeld, Appl. Phys. Lett., 1994, 64, 3021; « Growth of InSb using tris(dimethylamino)antimony and trimethylindium », https://doi.org/10.1063/1.111391 ,
https://aip.scitation.org/doi/abs/10.1063/1.111391
Tris-dimethylaminoantimony Sb(NMe2)3 (TDMASb) aas applied as Sb source for the growth of InGaAsSb layers nearly
lattice-matched to InP by MO MBE. TDMASb appeared to be useful not only as an Sb precursor,
but also as an additive reducing incorporation of C into the film from group-III MO sources., according to SIMS measurements. The incorporation of Sb into InGaAs shifted the room temperature PL peak wavelength from 1.66 to 1.75 μm and, simultaneously, the
peak intensity of InGaAsSb double compared to InGaAs.[[i]]
[i] M. Mitsuhara, T. Sato, N. Yamamoto, H. Fukano, Y. Kondo, J. Cryst. Growth, 2009, Vol.311, Iss. 14, p. 3636-3639, https://doi.org/10.1016/j.jcrysgro.2009.06.011 , « Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony »
https://www.sciencedirect.com/science/article/pii/S0022024809005922
Antimony tris(ethylmethylamide) Sb(NMeEt)3 (combined with Ge(NMeEt)4 and with the aid of Ar/H2 plasma), was applied as precursor for the growth Ge–Sb films on SiO2 (100 nm)/Si substrates at 150 °C substrate temperature by cyclic plasma enhanced CVD. The change of electric resistivity of Ge-doped Sb phase change thin films versus composition and microstructure was studied. Ge and Sb layers were deposited sequentially to form either a GexSby mixture or Ge/Sb nanolaminated films. The GexSbymixture showed a lower resistivity than the pure Sb film, although the resistivity of the nanolaminated films was higher. Phase change was observed at 210 °C (indicated by an abrupt change in resistance).
The thickness of GeSb films was measured by field-emission XSEM, film microstructure by TEM, layer composition by low-energy electron-induced x-ray emission
spectroscopy, sheet resistance was checked by four-point probe measurements.[[i]]
[i] J.-H. Kim, K. Lee, S.-J. Chae, Il-K. Han, J.-S. Roh, S.-K. Park, B. Joon Choi, Ch. Seong Hwang, E. Cho, S. Han, Appl. Phys. Lett., 2009, 94, 222115, « Change in the resistivity of Ge-doped Sb phase change thin films grownby chemical vapor deposition according to their microstructures », www.researchgate.net/profile/Byung_Joon_Choi/publication/228404277_Change_in_the_resistivity_of_Ge-doped_Sb_phase_change_thin_films_grown_by_chemical_vapor_deposition_according_to_their_microstructures/links/553fa09f0cf2320416eacce4.pdf