Anhydrous titanium nitrate Ti(NO3)4is a high volatility solid. Ti(NO3)4has been demonstrated as a useful precursor forpreparation of TiO2 films by CVD. A detailed comparison of TiO2 MOCVD growth from Ti(NO3)4 and Ti(OiPr)4 was reported. [4]
Anhydrous titanium nitrate Ti(NO3)4 in combination with silicon ethoxide Si(OEt)4 in has been used for deposition of titanium silicate
films but a large range of process conditions and precursor ratios resulted in films near 50% SiO2; it was concluded that pre-reactions between precursors prevented film
composition control. [i], [ii]
[i] R.C. Smith, C.J. Taylor, J. Roberts, N. Hoilien, S.A. Campbell, and W.L. Gladfelter, in Gate Stack and Silicide Issues in Silicon Processing, edited by L.A. Clevenger, S.A. Campbell, P.R. Besser, S.B. Herner, J. Kittl, (Mater. Res. Soc. Proc. 611, Pittsburgh, PA, 2000) C2.8.1-C2.8.6.
[ii] Gilmer, D. C. et al. Mater. Res. Soc. Symp. Proc. 1998, 495, 45