2,5-dihydrotellurophene (DHTe) was synthesized, characterized and tested as Te source for unassisted pyrolytic MOCVD growth of HgxCd1-xTe (using CdMe2
as Cd source) at substrate temperatures ⋍300°C. The long-term stability of DHTe significantly exceeded theoretical expectations. The growth rate of CdTe depended linearly on the DHTe flow rate and was independent of substrate temperature at ≥250°C. The maximum CdTe growth rate 4 μm/h,
was obtained with 800 sccm H2 carrier flow through the DHTe bubbler/sublime (maintained at temperature 10°C). All CdTe layers deposited on high-resistivity CdTe substrates
were p-type with carrier concentrations ~0.62-4.2×1016 cm-3. At a growth temperature of 250°C the best electrical properties CdTe layers were obtained (p-type carrier concentration was 6.2×1015 cm-3 , Hall mobility was 80 cm2/V·s) [i]
[i] L.S. Lichtmann, J.D. Parsons, E.-H. Cirlin, J. Cryst. Growth, 1988, Vol.86, Iss.1–4, p.217-221, « Temperature-independent unassisted pyrolytic MOCVD growth of cadmium telluride at 250°C using 2,5-dihydrotellurophene », https://doi.org/10.1016/0022-0248(90)90719-2 , https://www.sciencedirect.com/science/article/pii/0022024890907192