Hafnium precursors received much attention recently because of recent application of Hf-based materials as high-K dielectrics for replacement of SiO₂ and Si-based low-K dielectrics in integrated microelectronics. [[i]]

The conventional precursor used for ALD of HfO2, hafnium silicate or HfSiON layers are hafnium chloride HfCl4, tetrakis(dimethylamido)hafnium (TDMAH) or tetrakis(ethylmethylamido)hafnium (TEMAH) – see details under corresponding sections.