The CVD and ALD preparation of Al-containing thin films has been reported for various classes of compounds including metallic Al, nitrides, oxides and sulfides. Conventional precursors for this purpose are hydrides and alkyls: trimethylaluminum, triethylaluminum, alane dimethylethylamine adducts, dimethylaluminum hydride. These compounds at ambient temperature are liquids or solids with high vapor pressures.[4]

The review of precursor chemistry for the growth of group III nitrides (Al(Ga,In)N) is given in the work of Neumayer and Ekerdt [[i]]. A review of the single source precursors (SSPs) for chemical vapor deposition to the group III metal nitrides (aluminum nitride as well as gallium nitride and indium nitride) is given in the review of Getman and Franklin [[ii]].