For the the growth of boron-containing compounds by CVD, various classes of boron compounds have beed used, such as halides, B2H6 and borhydrides, boron alkyls, alkoxides.

            For example, for boron nitride thin films, mixtures of a boron-containing precursor (B2H6 or BCl3, BF3), and N2 or NH3 as source of nitrogen, and hydrogen and chlorine as coreactants and noble gases as carrier, are applied for c-BN deposition. The review of this area has been given by Konyashin et al. [[i]]