Beryllium has found limited applications in the thin films grown by MOCVD.

In particular, Be was reported to be an excellent p-type dopant in compound semiconductors such as InP and (In,Ga)As thin films grown by MOCVD, with p-doping reaching 1x10²⁰ cm^-3 level (f.e using BeEt₂ as dopant), [4] The advantage of Be as dopant is significantly lower memory effects and lower diffusion rate compared to Zn and Mg, making beryllium volatile compounds promising as p-dopants for MOCVD applications.

     Co-deposition of SiC using beryllium volatile compounds as precursors significantly increased thermal conductivity of CVD SiC at temperature up to 1000°C, grown by CVI (chemical vapor infiltration) method. [i]